NVD4804N
ON Semiconductor
Power MOSFET ( Transistor )NTD4804N, NVD4804N
Power MOSFET
30 V, 117 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC Q101 Qualified − N
NVD4805N
ON Semiconductor
Power MOSFET ( Transistor )NTD4805N, NVD4805N
Power MOSFET
30 V, 88 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotiv
NVD4806N
ON Semiconductor
Power MOSFET ( Transistor )NTD4806N, NVD4806N
Power MOSFET
30 V, 76 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and
NVD4808N
ON Semiconductor
Power MOSFET ( Transistor )NTD4808N, NVD4808N
Power MOSFET
30 V, 63 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive
NVD4809N
ON Semiconductor
Power MOSFET ( Transistor )NTD4809N, NVD4809N
Power MOSFET
30 V, 58 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC Q101 Qualified − N
NVD4810N
ON Semiconductor
Power MOSFET ( Transistor )NTD4810N, NVD4810N
Power MOSFET
30 V, 54 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and
NVD4813NH
ON Semiconductor
Power MOSFET ( Transistor )NTD4813NH, NVD4813NH Power MOSFET
Features
30 V, 40 A, Single N−Channel, DPAK/IPAK
• • • • • •
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG AEC−Q1