파트넘버.co.kr NVD4 데이터시트 검색

NVD4 전자부품 데이터시트



NVD4 전자부품 회로 및
기능 검색 결과



NVD4  

American Microsemiconductor
American Microsemiconductor

NVD4

Diode ( Rectifier )




NVD4804N  

ON Semiconductor
ON Semiconductor

NVD4804N

Power MOSFET ( Transistor )

NTD4804N, NVD4804N Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC Q101 Qualified − N



NVD4805N  

ON Semiconductor
ON Semiconductor

NVD4805N

Power MOSFET ( Transistor )

NTD4805N, NVD4805N Power MOSFET 30 V, 88 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotiv



NVD4806N  

ON Semiconductor
ON Semiconductor

NVD4806N

Power MOSFET ( Transistor )

NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and



NVD4808N  

ON Semiconductor
ON Semiconductor

NVD4808N

Power MOSFET ( Transistor )

NTD4808N, NVD4808N Power MOSFET 30 V, 63 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive



NVD4809N  

ON Semiconductor
ON Semiconductor

NVD4809N

Power MOSFET ( Transistor )

NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC Q101 Qualified − N



NVD4810N  

ON Semiconductor
ON Semiconductor

NVD4810N

Power MOSFET ( Transistor )

NTD4810N, NVD4810N Power MOSFET 30 V, 54 A, Single N−Channel, DPAK/IPAK Features • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • AEC−Q101 Qualified and



NVD4813NH  

ON Semiconductor
ON Semiconductor

NVD4813NH

Power MOSFET ( Transistor )

NTD4813NH, NVD4813NH Power MOSFET Features 30 V, 40 A, Single N−Channel, DPAK/IPAK • • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG AEC−Q1



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