NTMS4800N
ON Semiconductor
Power MOSFET ( Transistor )NTMS4800N Power MOSFET
Features
30 V, 8 A, N−Channel, SOIC−8
• • • • •
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses SOIC−8 Surface Mount Package Saves Bo
NTMS4807N
Power MOSFET ( Transistor )NTMS4807N Power MOSFET
Features
30 V, 14.8 A, N-Channel, SO-8
•ăLow RDS(on) to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThis is a Pb-Free Device
Applications
V(BR)DSS 30 V 7.5 mW @ 4.5 V
www.DataSheet4
ON Semiconductor
PDF
NTMS4801N
Power MOSFET ( Transistor )NTMS4801N Power MOSFET
Features
30 V, 12 A, N−Channel, SO−8
• • • •
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb−Free Device
http://onsemi.com
V(BR)DSS 30 V RDS(O
ON Semiconductor
PDF
NTMS4802N
Power MOSFET ( Transistor )NTMS4802N Power MOSFET
Features
30 V, 18 A, N−Channel, SO−8
• • • •
Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb−Free Device
http://onsemi.com
V(BR)DSS 30 V RDS
ON Semiconductor
PDF