NTGD4167C
ON Semiconductor
Power MOSFET ( Transistor )NTGD4167C Power MOSFET
Features
Complementary, 30 V, +2.9/−2.2 A, TSOP−6 Dual
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Complementary N−Channel and P−Channel MOSFET Small Size (3 x 3 mm) Dual TSOP−6 Package Leading Edge Trench Technology for Low On Resistance Reduced
NTGD4161P
Power MOSFET ( Transistor )NTGD4161P Power MOSFET
−30 V, −2.3 A, Dual P−Channel, TSOP−6
Features
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Fast Switching Speed Low Gate Charge Low RDS(on) Independently Connected Devices to Provide Design Flexibility This is a Pb−Free Device
http://onsemi.com
V(BR)DSS −30 V
RDS(on) Max 160 mW @ �
ON Semiconductor
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NTGD4169F
Power MOSFET and Schottky DiodeNTGD4169F Power MOSFET and Schottky Diode
Features
30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
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Fast Switching Low Gate Change Low RDS(on) Low VF Schottky Diode Independently Connected Devices to Provide Design Flexibility This is a Pb−Free Device
www.Da
ON Semiconductor
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