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Datasheet NTGD3148N Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 NTGD3148N   Power MOSFET ( Transistor )

NTGD3148N Power MOSFET 20 V, 3.5 A, Dual N-Channel, TSOP-6 Features •ăLow Threshold Levels, VGS(th) < 1.5 V •ăLow Gate Charge (3.8 nC) •ăLeading Edge Trench Technology of Low RDS(on) •ăHigh Power and Current Handling Capability •ăThis is a Pb-Free Device Applications http://onsemi.c
ON Semiconductor
ON Semiconductor
datasheet NTGD3148N pdf

NTGD31 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
NTGD3147F

Power MOSFET and Schottky Diode

NTGD3147F Power MOSFET and Schottky Diode Features −20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 • • • • • • Fast Switching Low Gate Change Low RDS(on) Low VF Schottky Diode Independently Connected Devices to Provide Design Flexibility This is
ON Semiconductor
ON Semiconductor
datasheet pdf - ON Semiconductor
NTGD3149C

Power MOSFET ( Transistor )

NTGD3149C Complementary, 20 V, +3.5/−2.7 A, TSOP−6 Dual Features Power MOSFET • • • • • • Complementary N−Channel and P−Channel MOSFET Small Size (3 x 3 mm) Dual TSOP−6 Package Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Im
ON Semiconductor
ON Semiconductor
datasheet pdf - ON Semiconductor
NTGD3148N

Power MOSFET ( Transistor )

NTGD3148N Power MOSFET 20 V, 3.5 A, Dual N-Channel, TSOP-6 Features •ăLow Threshold Levels, VGS(th) < 1.5 V •ăLow Gate Charge (3.8 nC) •ăLeading Edge Trench Technology of Low RDS(on) •ăHigh Power and Current Handling Capability •ăThis is a Pb-Free Device Applicati
ON Semiconductor
ON Semiconductor
datasheet pdf - ON Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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