NTGD3147F
ON Semiconductor
Power MOSFET and Schottky DiodeNTGD3147F Power MOSFET and Schottky Diode
Features
−20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6
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Fast Switching Low Gate Change Low RDS(on) Low VF Schottky Diode Independently Connected Devices to Provide Design
NTGD3148N
Power MOSFET ( Transistor )NTGD3148N Power MOSFET
20 V, 3.5 A, Dual N-Channel, TSOP-6
Features
•ăLow Threshold Levels, VGS(th) < 1.5 V •ăLow Gate Charge (3.8 nC) •ăLeading Edge Trench Technology of Low RDS(on) •ăHigh Power and Current Handling Capability •ăThis is a Pb-Free Device
Applications
http://onsemi.c
ON Semiconductor
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NTGD3149C
Power MOSFET ( Transistor )NTGD3149C
Complementary, 20 V, +3.5/−2.7 A, TSOP−6 Dual
Features
Power MOSFET
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Complementary N−Channel and P−Channel MOSFET Small Size (3 x 3 mm) Dual TSOP−6 Package Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve Switching Resp
ON Semiconductor
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