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NTGD3147F 전자부품 데이터시트



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NTGD3147F  

ON Semiconductor
ON Semiconductor

NTGD3147F

Power MOSFET and Schottky Diode

NTGD3147F Power MOSFET and Schottky Diode Features −20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 • • • • • • Fast Switching Low Gate Change Low RDS(on) Low VF Schottky Diode Independently Connected Devices to Provide Design




관련 부품 NTGD314 상세설명

NTGD3148N  

  
Power MOSFET ( Transistor )

NTGD3148N Power MOSFET 20 V, 3.5 A, Dual N-Channel, TSOP-6 Features •ăLow Threshold Levels, VGS(th) < 1.5 V •ăLow Gate Charge (3.8 nC) •ăLeading Edge Trench Technology of Low RDS(on) •ăHigh Power and Current Handling Capability •ăThis is a Pb-Free Device Applications http://onsemi.c



ON Semiconductor
ON Semiconductor

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NTGD3149C  

  
Power MOSFET ( Transistor )

NTGD3149C Complementary, 20 V, +3.5/−2.7 A, TSOP−6 Dual Features Power MOSFET • • • • • • Complementary N−Channel and P−Channel MOSFET Small Size (3 x 3 mm) Dual TSOP−6 Package Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve Switching Resp



ON Semiconductor
ON Semiconductor

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