NTE6664
NTE Electronics
Integrated Circuit 64K-Bit Dynamic RAMNTE6664 Integrated Circuit 64K–Bit Dynamic RAM
Description: The NTE6664 is a 65,536 Bit, high–speed, dynamic Random Access Memory. Organized as 65,536 one–bit words and fabricated using HMOS high–performance N–Channel silicon–gate technology, this
NTE66
MOSFET N-Ch / Enhancement Mode High Speed SwitchNTE66 MOSFET N–Ch, Enhancement Mode High Speed Switch
Description: The NTE66 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. Features: D Lower RDS(ON) D Improved Ind
NTE Electronics
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