Datasheet NTE355 Equivalent ( PDF )

NTE355 Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz Description: The NTE355 is designed for 12.5 Volt VHF large–signal amplifier applications required in military and industrial equipment operating to 250MHz. Features: D Balanced Emitter Construction with Isothermal Resistor Design to

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	NTE355	Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz NTE355 Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz Description: The NTE355 is designed for 12.5 Volt VHF large–signal amplifier applications required in military and industrial equipment operating to 250MHz. Features: D Balanced Emitter Construction with Isothermal Resistor Design to	NTE