파트넘버.co.kr NTE3312 데이터시트 검색

NTE3312 전자부품 데이터시트



NTE3312 전자부품 회로 및
기능 검색 결과



NTE3312  

NTE
NTE

NTE3312

Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed Switch

NTE3312 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: (T




관련 부품 NTE33 상세설명

NTE338F  

  
Silicon NPN Transistor RF Power Amp / Driver

NTE338F Silicon NPN Transistor RF Power Amp, Driver Description: The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 20W (PEP) Minimum Gain = 12dB Eff



NTE
NTE

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NTE338  

  
Silicon NPN Transistor RF Power Amp / Driver

NTE338F Silicon NPN Transistor RF Power Amp, Driver Description: The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 20W (PEP) Minimum Gain = 12dB Eff



NTE
NTE

PDF



NTE337  

  
Silicon NPN Transistor RF Power Amp / Driver

NTE337 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE337 is a silicon NPN transistor in a T72H type package designed primarily for use in large– signal amplifier driver and pre–driver stages. This device is intended for use in industrial communications equipment operating at fr



NTE
NTE

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NTE3323  

  
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed Switch

NTE3323 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: (TA = +25°C unless otherwise specified) C



NTE
NTE

PDF



NTE3322  

  
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed Switch

NTE3322 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching Absolute Maximum Raings: (TA = +25°C unless otherwise specified) Collector–Emitt



NTE
NTE

PDF



NTE3303  

  
Insulated Gate Bipolar Transistor N-Channel Enhancement Mode / High Speed Switch

NTE3303 Insulated Gate Bipolar Transistor N–Channel Enhancement Mode, High Speed Switch Features: D High Input Impedance D High Speed D Low Saturation Voltage D Enhancement Mode Applications: D High Power Switching D Motor Control Absolute Maximum Raings: (TA = +25°C unless otherwise specified) C



NTE
NTE

PDF




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