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NTE3028 Infrared Emitting Diode PN Gallium Arsenide Description: The NTE3028 is designed for applications requiring high power output, low drive power, and very fast response time. This device is used in industrial processing and control, light modulators, shaft or position encoders, punched card re
NTE3029B Infrared–Emitting Diode Description: The NTE3029B is a 940nm LED encapsulated in a clear, wide angle, sidelooker package. Features: D Good Optical to Mechanical Alignment D High Irradiance Level Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Forward Current, IF Continu
NTE3029A Infrared–Emitting Diode Description: The NTE3029A 940nm LED is a multi–purpose device designed for use in numerous applications. This Gallium Arsenide device is manufactured to tight tolerances for maximum performance and long lifetime. Features: D Low Cost D Low Degradation D New Mold
NTE3027 Infrared Emitting Diode High Speed for Remote Control Description: The NTE3027 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue–grey tinted plastic package. Features: D Low Forward Voltage D High Radiant Power and Radiant Intensity D Suitable for D
NTE3026 Light Emitting Diode (LED) Description: The Red/Green NTE3026 bicolor lamp is a white diffused, wide viewing angle, dual chips, utilizing Gallium Arsenide Phosphide on Gallium Phosphide red LED and Gallium Phosphide on Gallium Phosphide green LED. These dual chips operate independently of ea
NTE3029A Infrared–Emitting Diode Description: The NTE3029A 940nm LED is a multi–purpose device designed for use in numerous applications. This Gallium Arsenide device is manufactured to tight tolerances for maximum performance and long lifetime. Features: D Low Cost D Low Degradation D New Mold
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