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Datasheet NTE298 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 9 | NTE298 | Silicon Complementary Transistors NTE297 (NPN) & NTE298 (PNP) Silicon Complementary Transistors
Audio Amplifier, Driver
Features: D High Collector–Emitter Voltage D Ideal for 25 – 30W Low–Frequency Output Drive
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . |
 NTE |
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| 8 | NTE2980 | Logic Level MOSFET N-Channel / Enhancement Mode High Speed Switch NTE2980 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch
Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS(on) Specified at VGS = 4V & 5V D Fast Switching Absolute Maximum Ratings: Drain Current, ID Continuous (VGS = 5V) TC = +25°C . . . . . . . . . . . . . . . . . . |
NTE |
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| 7 | NTE2981 | Logic Level MOSFET N-Channel / Enhancement Mode High Speed Switch |
NTE |
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| 6 | NTE2984 | Logic Level MOSFET N-Channel / Enhancement Mode High Speed Switch NTE2984 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch
Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS(on) Specified at VGS = 4V & 5V D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Drain |
NTE |
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