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Datasheet NTE293 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 8 | NTE293 | Silicon Complementary Transistors Audio Amplifier and Driver NTE293 (NPN) & NTE294 (PNP) Silicon Complementary Transistors Audio Amplifier and Driver
Description: The NTE293 (NPN) and NTE294 (PNP) are silicon complementary transistors in a Giant TO92 type package designed for use in low–frequency power amplification and drive applications. Features: D Low C |
 NTE |
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| 7 | NTE2930 | MOSFET N-Channel / Enhancement Mode High Speed Switch NTE2930 MOSFET N–Channel, Enhancement Mode High Speed Switch
Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Lower Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower RDS(on): 0.032Ω Typ D Lower Leakage Current: 10µA (Max) @ VDS = 100V Absolu |
NTE |
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| 6 | NTE2931 | MOSFET N-Channel / Enhancement Mode High Speed Switch NTE2931 MOSFET N–Channel, Enhancement Mode High Speed Switch
Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Lower Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower RDS(on): 0.144Ω Typ D Lower Leakage Current: 10µA (Max) @ VDS = 200V Absolu |
NTE |
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| 5 | NTE2932 | MOSFET N-Channel / Enhancement Mode High Speed Switch NTE2932 MOSFET N–Channel, Enhancement Mode High Speed Switch
Features: D Avalanche Rugged Technology D Rugged Gate Oxide Technology D Lower Input Capacitance D Improved Gate Charge D Extended Safe Operating Area D Lower RDS(on): 0.071Ω Typ D Lower Leakage Current: 10µA (Max) @ VDS = 200V Absolu |
NTE |
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