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Datasheet NTE292 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | NTE292 | Silicon Complementary Transistors Medium Power Amp / Switch NTE291 (NPN) & NTE292 (PNP) Silicon Complementary Transistors
Medium Power Amp, Switch
Description: The NTE291 (NPN) and NTE292 (PNP) are General–Purpose Medium–Power silicon complementary transistors in a TO220 type package designed for switching and amplifier applications. They are especially |
 NTE |
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| 5 | NTE2920 | MOSFET N-Ch / Enhancement Mode High Speed Switch NTE2920 MOSFET N–Ch, Enhancement Mode High Speed Switch
Features: D Dynamic dv/dt Rating D Isolated Central Mounting Hole D Fast Switching D +175°C Operating Temperature D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25° |
NTE |
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| 4 | NTE2921 | MOSFET N-Ch / Enhancement Mode High Speed Switch NTE2921 MOSFET N–Ch, Enhancement Mode High Speed Switch
Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25°C . |
NTE |
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| 3 | NTE2922 | MOSFET N-Ch / Enhancement Mode High Speed Switch NTE2922 MOSFET N–Ch, Enhancement Mode High Speed Switch
Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current (VGS = 10V), ID TC = +25°C . |
NTE |
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