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NTE267 Silicon NPN Transistor High Gain Darlington Power Amp, Switch Features: D Forward Current Transfer Ratio: hFE = 90,000 min. D Free–Air Power Dissipation: 1.33W @ TA = +50°C D Hard Solder Mountdown Applications: D Driver D Regulator D Audio Output D Relay Substitute D Touch Switch D D D D
NTE2661 Silicon NPN Transistor Horizontal Deflection Output for HDTV Features: D High Speed: tf = 0.15µs Typ D High Breakdown Voltage: VCBO = 1700V D Low Saturation Voltage: VCE(sat) = 3V Max Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−to−Base Voltage, VCBO . .
NTE265 Silicon NPN Transistor Darlington Power Amplifier Features: D Forward Current Transfer Ratio: hFE = 10,000 Min D Power Dissipation: 1.33W Free–Air @ TA = +50°C D Hard Solder Mountdown Applications: D Driver, IC Driver D Regulator D Touch Switch D Audio Output D Relay Substitute D Oscillato
NTE2641 Silicon NPN Transistor Horizontal Deflection Output for High Resolution Displays & Color TVs Features: D High Voltage: VCBO = 1500V D Low Saturation Voltage: VCE(sat) = 3V Max D High Speed: tf = 0.1µs Typ Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Vo
NTE2633 (NPN) & NTE2634 (PNP) Silicon Complementary Transistors High Frequency Video Driver Description: The NTE2633 (NPN) and NTE2634 (PNP) are silicon complementary epitaxial transistor in a TO126 type package designed for use in the buffer stage of the driver for high–resolution color graphics
NTE261 (NPN) & NTE262 (PNP) Silicon Complementary Transistors Darlington Power Amplifier Description: The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Featur
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