NTE235
NTE
Silicon NPN Transistor Final RF Power OutputNTE235 Silicon NPN Transistor Final RF Power Output
Description: The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment. Absolute Maximum Ratings: (TA =
NTE2350
NTE
Silicon Darlington TransistorsNTE2349 (NPN) & NTE2350 (PNP) Silicon Darlington Transistors High Current, General Purpose
Description:
The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general pu
NTE2351
NTE
Silicon Complementary Transistors Darlington Power Amp / SwitchNTE2351 (NPN) & NTE2352 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch
Features: D High DC Current Gain: hFE (1) = 2000 Min @ VCE = 2V, IC = 1A D Low Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 3A Absolute Maximum Ratings: (TA = +25°C
NTE2352
NTE
Silicon Complementary TransistorsNTE2351 (NPN) & NTE2352 (PNP) Silicon Complementary Transistors
Darlington Power Amp, Switch
Features: D High DC Current Gain: hFE (1) = 2000 Min @ VCE = 2V, IC = 1A D Low Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 3A
Absolute Maximum Ratings: (TA = +25
NTE2353
NTE
Silicon NPN Transistor TV Horizontal Deflection Output w/Damper DiodeNTE2353 Silicon NPN Transistor TV Horizontal Deflection Output w/Damper Diode
Features: D High Speed: tf = 100nsec D High Breakdown Voltage: VCBO = 1500V D On–Chip Damper Diode Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Ba
NTE2354
NTE
Silicon NPN Transistor High Voltage Horizontal Output for High Definition CRTNTE2354
Silicon NPN Transistor High Voltage Horizontal Output for High Definition CRT
Applications: D High–definition color display horizontal deflection output Features: D Fast speed: tf = 100ns Typ D High breakdown voltage: VCBO = 1500V D High reliability
NTE2355
NTE
Silicon Complementary Transistors Digital w/2 Built-In 10k Bias ResistorsNTE2355 (NPN) & NTE2356 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 10k Bias Resistors
Features: D Built–In Bias Resistor (R1 = 10kΩ, R2 = 10kΩ) D Small–Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interfa
NTE2356
NTE
Silicon Complementary TransistorsNTE2355 (NPN) & NTE2356 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 10k Bias Resistors
Features:
D Built–In Bias Resistor (R1 = 10kΩ, R2 = 10kΩ) D Small–Sized Package (TO92 type)
Applications: D Switching Circuit D Inverter D Inter