파트넘버.co.kr NTE235 데이터시트 검색

NTE235 전자부품 데이터시트



NTE235 전자부품 회로 및
기능 검색 결과



NTE235  

NTE
NTE

NTE235

Silicon NPN Transistor Final RF Power Output

NTE235 Silicon NPN Transistor Final RF Power Output Description: The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment. Absolute Maximum Ratings: (TA =



NTE2350  

NTE
NTE

NTE2350

Silicon Darlington Transistors

NTE2349 (NPN) & NTE2350 (PNP) Silicon Darlington Transistors High Current, General Purpose Description: The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general pu



NTE2351  

NTE
NTE

NTE2351

Silicon Complementary Transistors Darlington Power Amp / Switch

NTE2351 (NPN) & NTE2352 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Features: D High DC Current Gain: hFE (1) = 2000 Min @ VCE = 2V, IC = 1A D Low Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 3A Absolute Maximum Ratings: (TA = +25°C



NTE2352  

NTE
NTE

NTE2352

Silicon Complementary Transistors

NTE2351 (NPN) & NTE2352 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Features: D High DC Current Gain: hFE (1) = 2000 Min @ VCE = 2V, IC = 1A D Low Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 3A Absolute Maximum Ratings: (TA = +25



NTE2353  

NTE
NTE

NTE2353

Silicon NPN Transistor TV Horizontal Deflection Output w/Damper Diode

NTE2353 Silicon NPN Transistor TV Horizontal Deflection Output w/Damper Diode Features: D High Speed: tf = 100nsec D High Breakdown Voltage: VCBO = 1500V D On–Chip Damper Diode Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Ba



NTE2354  

NTE
NTE

NTE2354

Silicon NPN Transistor High Voltage Horizontal Output for High Definition CRT

NTE2354 Silicon NPN Transistor High Voltage Horizontal Output for High Definition CRT Applications: D High–definition color display horizontal deflection output Features: D Fast speed: tf = 100ns Typ D High breakdown voltage: VCBO = 1500V D High reliability



NTE2355  

NTE
NTE

NTE2355

Silicon Complementary Transistors Digital w/2 Built-In 10k Bias Resistors

NTE2355 (NPN) & NTE2356 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 10k Bias Resistors Features: D Built–In Bias Resistor (R1 = 10kΩ, R2 = 10kΩ) D Small–Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interfa



NTE2356  

NTE
NTE

NTE2356

Silicon Complementary Transistors

NTE2355 (NPN) & NTE2356 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 10k Bias Resistors Features: D Built–In Bias Resistor (R1 = 10kΩ, R2 = 10kΩ) D Small–Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Inter



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