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NTD4855N Power MOSFET 25 V, 98 A, Single N--Channel, DPAK/IPAK Features • Trench Technology • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb--Free Devices Applications • VCORE App
NTD4856N, NVD4856N Power MOSFET 25 V, 89 A, Single N−Channel, DPAK/IPAK Features • Trench Technology • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • NVD Prefix for Automotive and Other Applic
NTD4854N Power MOSFET 25 V, 128 A, Single N--Channel, DPAK/IPAK Features • Trench Technology • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb--Free Devices Applications • VCORE Ap
NTD4858N Power MOSFET 25 V, 73 A, Single N−Channel, DPAK/IPAK Features • Trench Technology • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb−Free Devices Applications • VCORE A
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