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Datasheet NTD12N10 Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 NTD12N10   Power MOSFET ( Transistor )

NTD12N10 Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK Features http://onsemi.com V(BR)DSS 100 V RDS(on) TYP 165 mW @ 10 V N−Channel D ID MAX 12 A • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Avalanche Energy Specif
ON Semiconductor
ON Semiconductor
datasheet NTD12N10 pdf

NTD12 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
NTD12N10

Power MOSFET ( Transistor )

NTD12N10 Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK Features http://onsemi.com V(BR)DSS 100 V RDS(on) TYP 165 mW @ 10 V N−Channel D ID MAX 12 A • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • Fast Recovery Diode Ava
ON Semiconductor
ON Semiconductor
datasheet pdf - ON Semiconductor
NTD12

HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS

NTD HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE Peak EDI Type No. Reverse V oltage PRV (V olts) Avg. Fwd.Current o at 50 C (mA) Max. Fwd. Voltage Drop at 25 C And I O V F (Volts) o Le
EDI
EDI
datasheet pdf - EDI
NTD122C

Thyristor/Diode Module

Naina Semiconductor Ltd. NTD122C Features Thyristor/Diode Module, 130A • Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance Voltage Ratings (TA = 25oC, unless other
Naina Semiconductor
Naina Semiconductor
datasheet pdf - Naina Semiconductor


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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