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Datasheet NTD12 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | NTD12 | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI Type No. Reverse V oltage PRV (V olts)
Avg. Fwd.Current o at 50 C (mA)
Max. Fwd. Voltage Drop at 25 C And I O V F (Volts)
o
Length L Fig.3
NTD 08 | EDI | rectifier |
2 | NTD122C | Thyristor/Diode Module Naina Semiconductor Ltd.
NTD122C
Features
Thyristor/Diode Module, 130A
• Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance
Voltage Ratings (TA = 25oC, unless otherwise noted)
Type nu | Naina Semiconductor | diode |
3 | NTD12N10 | Power MOSFET, Transistor NTD12N10 Power MOSFET 12 Amps, 100 Volts
N−Channel Enhancement−Mode DPAK
Features http://onsemi.com
V(BR)DSS 100 V RDS(on) TYP 165 mW @ 10 V N−Channel D ID MAX 12 A
• Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • •
Fast Recovery Diode Avalanche Energy Specif | ON Semiconductor | mosfet |
NTD Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | NTD | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI Type No. Reverse V oltage PRV (V olts)
Avg. Fwd.Current o at 50 C (mA)
Max. Fwd. Voltage Drop at 25 C And I O V F (Volts)
o
Length L Fig.3
NTD 08 EDI rectifier | | |
2 | NTD | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI Type No. Reverse V oltage PRV (V olts)
Avg. Fwd.Current o at 50 C (mA)
Max. Fwd. Voltage Drop at 25 C And I O V F (Volts)
o
Length L Fig.3
NTD 08 EDI rectifier | | |
3 | NTD08 | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI Type No. Reverse V oltage PRV (V olts)
Avg. Fwd.Current o at 50 C (mA)
Max. Fwd. Voltage Drop at 25 C And I O V F (Volts)
o
Length L Fig.3
NTD 08 EDI rectifier | | |
4 | NTD10 | HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS NTD
HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE
Peak EDI Type No. Reverse V oltage PRV (V olts)
Avg. Fwd.Current o at 50 C (mA)
Max. Fwd. Voltage Drop at 25 C And I O V F (Volts)
o
Length L Fig.3
NTD 08 EDI rectifier | | |
5 | NTD106B | Thyristor/Diode Module Naina Semiconductor Ltd.
NTD106B
Features
Thyristor/Diode Module, 106A
• Improved glass passivation for high reliability • Exceptional stability at high temperatures • High di/dt and dv/dt capabilities • Low thermal resistance
Voltage Ratings (TA = 25oC, unless otherwise noted)
Type nu Naina Semiconductor diode | | |
6 | NTD110N02R | Power MOSFET, Transistor NTD110N02R Power MOSFET
24 V, 110 A, N−Channel DPAK
Features
• • • • • •
Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High−Efficiency DC� ON mosfet | | |
7 | NTD110N02RG | Power MOSFET, Transistor NTD110N02R Power MOSFET
24 V, 110 A, N−Channel DPAK
Features
• • • • • •
Planar HD3e Process for Fast Switching Performance Low RDS(on) to Minimize Conduction Loss Low Ciss to Minimize Driver Loss Low Gate Charge Optimized for High Side Switching Requirements in High−Efficiency DC� ON mosfet | |
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Número de pieza | Descripción | Fabricantes | |
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