NSVMMBD352WT1G
ON Semiconductor
Dual Schottky Barrier DiodeMMBD352WT1G, NSVMMBD352WT1G
Dual Schottky Barrier Diode
These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits.
Features
Very Low Capacitance − Less Than 1.0 pF @ 0 V