Datasheet NPTS25 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	NPTS25	Press Fit Stud Mount Triac Naina Semiconductor Ltd. NPTS25 Press Fit Stud Mount Triac ½”, 25 Amps Features • Improved glass passivation for high reliability • Exceptional stability at high temperatures • Metric thread type available • Low thermal resistance TO-48/F Electrical Characteristics (TA = 250C unless o	Naina Semiconductor	triac

NPT Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	NPT1015B	GaN Wideband Transistor NPT1015B GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Features  GaN on Si HEMT D-Mode Transistor  Suitable for linear and saturated applications  Tunable from DC - 3.5 GHz  28 V Operation  12 dB Gain @ 2.5 GHz  54 % Drain Efficiency @ 2.5 GHz  100 % RF Tested  Standard met	MA-COM	transistor
2	NPT1015B-SMBPPR	GaN Wideband Transistor NPT1015B GaN Wideband Transistor 28 V, 45 W DC - 3.5 GHz Features  GaN on Si HEMT D-Mode Transistor  Suitable for linear and saturated applications  Tunable from DC - 3.5 GHz  28 V Operation  12 dB Gain @ 2.5 GHz  54 % Drain Efficiency @ 2.5 GHz  100 % RF Tested  Standard met	MA-COM	transistor
3	NPT15	Press Fit Triac Naina Semiconductor Ltd. Press Fit Triac ½”, 15 Amps Features • Improved glass passivation for high reliability • Exceptional stability at high temperatures • Metric thread type available • Low thermal resistance NPT15 TO-203/F Electrical Characteristics (TA = 250C unless otherwise spec	Naina Semiconductor	triac
4	NPT2010	GaN HEMT NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features  Suitable for linear and saturated applications  Tunable from DC-2.2 GHz  48V Operation  Industry Standard Package  High Drain Efficiency (>60%) Ap	Nitronex	data
5	NPT2018	GaN HEMT NPT2018 Preliminary Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features  Suitable for linear and saturated applications  Tunable from DC-6 GHz  48V Operation  Industry Standard Plastic Package  High Drain E	Nitronex	data
6	NPT2019	GaN HEMT NPT2019 Preliminary Gallium Nitride 48V, 25W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features  Suitable for linear and pulsed applications  Tunable from DC-6 GHz  48V Operation  Industry Standard Plastic Package  High Drain Effici	Nitronex	data
7	NPT2020	GaN Wideband Transistor NPT2020 GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz Features  GaN on Si HEMT Depletion Mode Transistor  Suitable for Linear and Saturated Applications  Tunable from DC - 3.5 GHz  48 V Operation  13.5 dB Gain at 3.5 GHz  55 % Drain Efficiency at 3.5 GHz  100 % RF Tested  S	MA-COM	transistor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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