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NPT2021 GaN Wideband Transistor 48 V, 45 W DC - 2.5 GHz Features GaN on Si HEMT D-Mode Transistor Suitable for linear and saturated applications Tunable from DC - 2.5 GHz 48 V Operation 16.5 dB Gain at 2.5 GHz 55 % Drain Efficiency at 2.5 GHz 100 % RF Tested TO-272 Pa
NPT2019 Preliminary Gallium Nitride 48V, 25W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features Suitable for linear and pulsed applications Tunable from DC-6 GHz 48V Operation Industry Standard Plastic Package High Drain Effici
NPT2020 GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz Features GaN on Si HEMT Depletion Mode Transistor Suitable for Linear and Saturated Applications Tunable from DC - 3.5 GHz 48 V Operation 13.5 dB Gain at 3.5 GHz 55 % Drain Efficiency at 3.5 GHz 100 % RF Tested S
NPT2020 GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz Features GaN on Si HEMT Depletion Mode Transistor Suitable for Linear and Saturated Applications Tunable from DC - 3.5 GHz 48 V Operation 13.5 dB Gain at 3.5 GHz 55 % Drain Efficiency at 3.5 GHz 100 % RF Tested S
NPT2022 GaN Wideband Transistor 48 V, 100 W DC - 2 GHz Features GaN on Si HEMT D-Mode Transistor Suitable for linear and saturated applications Tunable from DC - 2 GHz 48 V Operation 20 dB Gain @ 900 MHz 60 % Drain Efficiency @ 900 MHz 100 % RF Tested Standard plastic
NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features Suitable for linear and saturated applications Tunable from DC-2.2 GHz 48V Operation Industry Standard Package High Drain Efficiency (>60%) Ap
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PartNumber.co.kr | 2020 | 연락처 |