파트넘버.co.kr NPT2018 데이터시트 검색

NPT2018 전자부품 데이터시트



NPT2018 전자부품 회로 및
기능 검색 결과



NPT2018  

Nitronex
Nitronex

NPT2018

GaN HEMT

NPT2018 Preliminary Gallium Nitride 48V, 12.5W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features  Suitable for linear and saturated applications  Tunable from DC-6 GHz  48V Operation  Industry S




관련 부품 NPT20 상세설명

NPT2021  

  
GaN Wideband Transistor

NPT2021 GaN Wideband Transistor 48 V, 45 W DC - 2.5 GHz Features  GaN on Si HEMT D-Mode Transistor  Suitable for linear and saturated applications  Tunable from DC - 2.5 GHz  48 V Operation  16.5 dB Gain at 2.5 GHz  55 % Drain Efficiency at 2.5 GHz  100 % RF Tested  TO-272 Pa



MA-COM
MA-COM

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NPT2019  

  
GaN HEMT

NPT2019 Preliminary Gallium Nitride 48V, 25W, DC-6 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features  Suitable for linear and pulsed applications  Tunable from DC-6 GHz  48V Operation  Industry Standard Plastic Package  High Drain Effici



Nitronex
Nitronex

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NPT2020-SMB2  

  
GaN Wideband Transistor

NPT2020 GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz Features  GaN on Si HEMT Depletion Mode Transistor  Suitable for Linear and Saturated Applications  Tunable from DC - 3.5 GHz  48 V Operation  13.5 dB Gain at 3.5 GHz  55 % Drain Efficiency at 3.5 GHz  100 % RF Tested  S



MA-COM
MA-COM

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NPT2020  

  
GaN Wideband Transistor

NPT2020 GaN Wideband Transistor 48 V, 50 W DC - 3.5 GHz Features  GaN on Si HEMT Depletion Mode Transistor  Suitable for Linear and Saturated Applications  Tunable from DC - 3.5 GHz  48 V Operation  13.5 dB Gain at 3.5 GHz  55 % Drain Efficiency at 3.5 GHz  100 % RF Tested  S



MA-COM
MA-COM

PDF



NPT2022  

  
GaN Wideband Transistor

NPT2022 GaN Wideband Transistor 48 V, 100 W DC - 2 GHz Features  GaN on Si HEMT D-Mode Transistor  Suitable for linear and saturated applications  Tunable from DC - 2 GHz  48 V Operation  20 dB Gain @ 900 MHz  60 % Drain Efficiency @ 900 MHz  100 % RF Tested  Standard plastic



MA-COM
MA-COM

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NPT2010  

  
GaN HEMT

NPT2010 Gallium Nitride 48V, 100W, DC-2.2 GHz HEMT Built using the SIGANTIC® process - A proprietary GaN-on-Silicon technology Features  Suitable for linear and saturated applications  Tunable from DC-2.2 GHz  48V Operation  Industry Standard Package  High Drain Efficiency (>60%) Ap



Nitronex
Nitronex

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