NP90N03VLG
Renesas
MOS FIELD EFFECT TRANSISTORNP90N03VLG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0129EJ0100 Rev.1.00
Sep 24, 2010
Description
The NP90N03VLG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance �
NP90N03VHG
MOS FIELD EFFECT TRANSISTORNP90N03VHG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0128EJ0100 Rev.1.00
Sep 24, 2010
Description
The NP90N03VHG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance ⎯ RDS(on) = 3.2 mΩ MAX. (VGS = 10 V, ID
Renesas
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