NP16N04YUG
MOS FIELD EFFECT TRANSISTORNP16N04YUG
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0362EJ0100 Rev.1.00
Jun 13, 2011
Description
The NP16N04YUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance ⎯ RDS(on) = 25 mΩ MAX. (VGS = 10 V, ID =
Renesas
PDF
NP161N04TUG
N-CHANNEL POWER MOS FETDATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP161N04TUG
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION The NP161N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP161N04TUG-E1-AY Note NP161N04TUG-E2-AY Note
LEAD PLATING
Renesas
PDF
NP160N055TUK
MOS FIELD EFFECT TRANSISTORPreliminary Data Sheet
NP160N055TUK
MOS FIELD EFFECT TRANSISTOR
R07DS0592EJ0100 Rev.1.00
Dec 12, 2011
Description
The NP160N055TUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance RDS(on) = 2.10 m MAX. (VGS =
Renesas
PDF