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Datasheet NJW0281G Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | NJW0281G | Silicon NPN Power Transistor INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
NJW0281G
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO=250V(Min) ·Good Linearity of hFE ·Complement to Type NJW0302G
APPLICATIONS ·Designed for high fidelity audio amplifier and
other linear |
 Inchange Semiconductor |
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| 1 | NJW0281G | (NJW0281G / NJW0302G) Complementary NPN-PNP Power Bipolar Transistors NJW0281G (NPN) NJW0302G (PNP)
Complementary NPN-PNP Power Bipolar Transistors
These complementary devices are lower power versions of the popular NJW3281G and NJW1302G audio output transistors. With superior gain linearity and safe operating area performance, these transistors are ideal for high f |
 ON Semiconductor |
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