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F-2 01/99 NJ01 Process Silicon Junction Field-Effect Transistor ¥ Low-Current ¥ Low Gate Leakage Current ¥ High Input Impedance Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die
F-4 01/99 NJ14AL Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier ¥ Rf AMP to 1.0 Ghz Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.
F-46 01/99 NJ1800DL Process Silicon Junction Field-Effect Transistor ¥ ¥ ¥ ¥ Low-Current Low Gate Leakage Current High Input Impedance Low-Noise 10 mA +150°C – 65°C to +175°C D G Absolute maximum ratings at 25¡C free-air temperature. Gate Current, Ig Operating Junction Temperature, T
F-10 01/99 NJ26A Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.016" X 0.016" All Rou
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