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Datasheet NJ1800D Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | NJ1800D | Silicon Junction Field-Effect Transistor F-44
01/99
NJ1800D Process
Silicon Junction Field-Effect Transistor
¥ Ultra Low-Noise Pre-Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
D
G
Devices in this Databook based on the N |
 InterFET |
 |
| 1 | NJ1800DL | Silicon Junction Field-Effect Transistor F-46
01/99
NJ1800DL Process
Silicon Junction Field-Effect Transistor
¥ ¥ ¥ ¥ Low-Current Low Gate Leakage Current High Input Impedance Low-Noise
10 mA +150°C – 65°C to +175°C
D
G
Absolute maximum ratings at 25¡C free-air temperature.
Gate Current, Ig Operating Junction Temperature, T |
InterFET |
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