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Datasheet NGTB40N120LWG Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
1 NGTB40N120LWG   IGBT

NGTB40N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on−state voltage and minimal switching loss, the IGBT is well suited f
 ON Semiconductor
ON Semiconductor		 datasheet NGTB40N120LWG pdf

NGTB40N120 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza Descripción Fabricantes PDF
NGTB40N120IHLWG

IGBT

NGTB40N120IHLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The
 ON Semiconductor
ON Semiconductor		 datasheet pdf - ON Semiconductor
NGTB40N120LWG

IGBT

NGTB40N120LWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications. Offering both low on−state voltage and minimal switching loss, the I
 ON Semiconductor
ON Semiconductor		 datasheet pdf - ON Semiconductor
NGTB40N120FLWG

IGBT

NGTB40N120FLWG IGBT This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IG
 ON Semiconductor
ON Semiconductor		 datasheet pdf - ON Semiconductor


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