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NGD8209N 전자부품 데이터시트



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NGD8209N  

ON Semiconductor
ON Semiconductor

NGD8209N

Ignition IGBT

NGD8209N Ignition IGBT 12 A, 410 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses inclu



NGD8209NT4G  

ON Semiconductor
ON Semiconductor

NGD8209NT4G

Ignition IGBT

NGD8209N Ignition IGBT 12 A, 410 V N−Channel DPAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in inductive coil drivers applications. Primary uses inclu



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