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NGB8207AN 전자부품 데이터시트



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NGB8207AN  

ON Semiconductor
ON Semiconductor

NGB8207AN

Ignition IGBT

NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Prim



NGB8207ANT4G  

ON Semiconductor
ON Semiconductor

NGB8207ANT4G

Ignition IGBT

NGB8207AN, NGB8207ABN Ignition IGBT 20 A, 365 V, N−Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil drivers applications. Prim



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