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NEC's C TO X BAND N-CHANNEL GaAs MES FET NE722S01 FEATURES • HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz • OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz • LOW NOISE/HIGH GAIN: NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz • GATE LENGTH: LG = 0.8 µm (recessed gate) • GATE WID
PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG210719 FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SiGe TRANSISTOR • 3-PIN SUPER MINIMOLD (19) PACKAGE ORDERING INFORMAT
Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CONSTRUCTION • POWER BACK-UP FOR CMOS RAM (UP TO 50μA DISCHARGE CURRENT) • TAPE AND BOX PACKAGING • SUITABLE FOR FLOW SOLDERING • LEAD-FREE FINISH CHARACTERISTICS Rated Voltage Range Rated Capacitance Range Operating Temp. Range Capacitanc
Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CONSTRUCTION • HIGH CURRENT DISCHARGE (UP TO 50mA) • IDEAL AS MEMORY BACK-UP POWER SUPPLY • SUITABLE FOR FLOW SOLDERING • LEAD-FREE FINISH CHARACTERISTICS Rated Voltage Range Rated Capacitance Range Operating Temp. Range Capacitance Toleran
Philips Semiconductors Product specification Electronic ballast controller circuit NE5565 DESCRIPTION The Electronic Ballast controller chip has been designed in a bipolar process. It is housed in a 20-lead dual-in-line plastic package. The control chip contains the equivalent of two (2) switche
Radial Leaded & Snap-in Back-Up Capacitors FEATURES • HIGH POWER • HIGH CAPACITANCE (UP TO 300F) • IDEAL AS POWER SUPPLY BACK-UP CHARACTERISTICS Series Rated Voltage Range Rated Capacitance Range Operating Temp. Range Capacitance Tolerance Load Life Test NEDZ @+70°C 1000 hours NEDZH @+60°C 2
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