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NEV  

NTE Electronics
NTE Electronics

NEV

ALUMINUM ELECTROLYTIC

ALUMINUM ELECTROLYTIC 6.3V to 100V NEV, NEH SERIES SUBMINIATURE (NEV: Radial Lead, NEH: Axial Leads) The NEV and NEH series subminiature aluminum electrolytic capacitors are especially suitable for applications requiring high capacitance, low cost, and very sm




관련 부품 N 상세설명

N08L083WC2C  

  
8Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K x 8 bit

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N08L083WC2C Advance Information 8Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K × 8 bit Overview The N08L083WC2C is an integrated memory device c



NanoAmp Solutions
NanoAmp Solutions

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N08L1618C2A  

  
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N08L1618C2A Advance Information 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit Overview The N08L1618C2A is an integrated memory device co



NanoAmp Solutions
NanoAmp Solutions

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N08L163WC1C  

  
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N08L163WC1C Advance Information 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit Overview The N08L163WC1C is an integrated memory device c



NanoAmp Solutions
NanoAmp Solutions

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N08L163WC2C  

  
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N08L163WC2C Advance Information 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit Overview The N08L163WC2C is an integrated memory device c



NanoAmp Solutions
NanoAmp Solutions

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N08L6182A  

  
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit

N08L6182A 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit Overview The N08L6182A is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to



ON Semiconductor
ON Semiconductor

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N08L63W2A  

  
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit

N08L63W2A 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit Overview The N08L63W2A is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology t



ON Semiconductor
ON Semiconductor

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