NE680
NEC
NECs NPN SILICON HIGH FREQUENCY TRANSISTORNEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
NE680
CEL
NPN SILICON HIGH FREQUENCY TRANSISTORNoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB)
SILICON TRANSISTOR
NE680 SERIES
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE:
1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAI
NE68000
CEL
NPN SILICON HIGH FREQUENCY TRANSISTORNoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB)
SILICON TRANSISTOR
NE680 SERIES
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE:
1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAI
NE68018
NEC
NONLINEAR MODELNONLINEAR MODEL
SCHEMATIC
CCBPKG CCB LC LBX Base LB CCE LCX Collector
NE68018
Q1
CBEPKG
LE
CCEPKG
LEX
Emitter
BJT NONLINEAR MODEL PARAMETERS (1)
Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 3.84e-16 12
NE68018
CEL
NPN SILICON HIGH FREQUENCY TRANSISTORNoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB)
SILICON TRANSISTOR
NE680 SERIES
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE:
1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAI
NE68018-T1
NEC
NECs NPN SILICON HIGH FREQUENCY TRANSISTORNEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
NE68019
CEL
NPN SILICON HIGH FREQUENCY TRANSISTORNoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB)
SILICON TRANSISTOR
NE680 SERIES
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE:
1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAI
NE68019-T1
NEC
NECs NPN SILICON HIGH FREQUENCY TRANSISTORNEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE