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NE615 전자부품 데이터시트



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NE615  

Philips
Philips

NE615

SA615

INTEGRATED CIRCUITS SA615 High performance low power mixer FM IF system Product specification Replaces data of 1992 Nov 03 IC17 Data Handbook 1997 Nov 07 Philips Semiconductors Philips Semiconductors Product specification High performance low power mixer




관련 부품 NE6 상세설명

NE662M16  

  
NPN SILICON HIGH FREQUENCY TRANSISTOR

NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M16 PACKAGE: • Flat Lead Style with a height of just 0.50mm NE662M16 DESCRIPTION The NE662M16 is fab



NEC
NEC

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NE68039-T1  

  
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE 00 (CHIP) NE680 SERIES E B 35 (MICRO-



NEC
NEC

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NE68039  

  
NPN SILICON HIGH FREQUENCY TRANSISTOR

NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB) SILICON TRANSISTOR NE680 SERIES NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz •



CEL
CEL

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NE68035  

  
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE 00 (CHIP) NE680 SERIES E B 35 (MICRO-



NEC
NEC

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NE687M03  

  
NPN SILICON TRANSISTOR

NEC's NE687M03 NPN SILICON TRANSISTOR FEATURES • NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 14 GHz LOW NOISE FIGURE: NF = 1.4 dB at 2



CEL
CEL

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NE661M04  

  
NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

DATA SHEET NPN SILICON RF TRANSISTOR NE661M04 NPN SILICON RF TRANSISTOR FOR LOW CURRENT, LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD FEATURES • Low noise and high gain with low collector current • NF = 1.2 dB, Ga = 16 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 2 mA • Ma



NEC
NEC

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