NE5550779A
Renesas
Silicon Power LDMOS FETData Sheet
NE5550779A
Silicon Power LDMOS FET
FEATURES
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R09DS0040EJ0300 Rev.3.00 Mar 12, 2013
High Output Power : Pout = 38.5 dBm TYP. (VDS = 7.5 V, IDset = 140 mA, f = 460 MHz, Pin = 25 dBm) High power added efficiency : ηadd = 66% TYP.