NE5511279A
NEC
7.5 V UHF BAND RF POWER SILICON LD-MOS FETNEC'S 7.5 V UHF BAND NE5511279A RF POWER SILICON LD-MOS FET
FEATURES
• HIGH OUTPUT POWER: Pout = 40.0 dBm TYP., f = 900 MHz, VDS = 7.5 V, Pout = 40.5 dBm TYP., f = 460 MHz, VDS = 7.5 V, • HIGH POWER ADDED EFFICIENCY: ηadd = 48% TYP., f = 900 MHz, VDS = 7.