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Datasheet NE5500179A Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | NE5500179A | SILICON POWER MOS FET DATA SHEET
SILICON POWER MOS FET
NE5500179A
4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 4.8 V GSM 1 800 and GSM 1 900 handsets. Dies |
 NEC |
 |
| 1 | NE5500179A-T1 | SILICON POWER MOS FET DATA SHEET
SILICON POWER MOS FET
NE5500179A
4.8 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS
DESCRIPTION
The NE5500179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 4.8 V GSM 1 800 and GSM 1 900 handsets. Dies |
NEC |
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