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PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52118 L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω) OIP3 = 15 dBm TYP. (@f =
PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52118 L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω) OIP3 = 15 dBm TYP. (@f =
INTEGRATED CIRCUITS NE521 High-speed dual-differential comparator/sense amp Product data Supersedes data of 1994 Aug 31 File under Integrated Circuits, IC11 Handbook 2001 Aug 03 Philips Semiconductors Philips Semiconductors Product data High-speed dual-differential comparator/sense amp NE521
Philips Semiconductors Product specification Transimpedance amplifier (280MHz) NE5210 DESCRIPTION The NE5210 is a 7kΩ transimpedance wide band, low noise amplifier with differential outputs, particularly suitable for signal recovery in fiber-optic receivers. The part is ideally suited for many
NE521 High−Speed Dual−Differential Comparator/Sense Amp Features • • • • TTL-Compatible Strobes and Outputs Large Common-Mode Input Voltage Range Operates from Standard Supply Voltages Pb−Free Packages are Available http://onsemi.com MARKING DIAGRAMS 14 1 SOIC−14 D SUFFIX CASE 751
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