NE3510M04
CEL
HETERO JUNCTION FIELD EFFECT TRANSISTORDATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3510M04
L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
FEATURES
• Low noise figure and high associated gain NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA NF = 0.35 dB TYP., Ga