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Datasheet NE3508M04 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 1 | NE3508M04 | HETERO JUNCTION FIELD EFFECT TRANSISITOR
PRELIMINARY PRODUCT INFORMATION HETERO JUNCTION FIELD EFFECT TRANSISITOR
NE3508M04
L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
FEATURES
- Super Low Noise Figure & Associated Gain : NF=0.45dB TYP. Ga=14dB TYP. @f=2GHz, VDS=2V, ID=10mA - Flat-lead 4-pin tin-type super mini-m |
 California Eastern Labs |
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NE3508 Datasheet ( Hoja de datos ) - resultados coincidentes |
| Número de pieza | Descripción | Fabricantes | |
| NE3508M04 | HETERO JUNCTION FIELD EFFECT TRANSISITOR |
California Eastern Labs |
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