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Datasheet NE25139 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | NE25139 | GENERAL PURPOSE DUAL-GATE GaAS MESFET GENERAL PURPOSE DUAL-GATE GaAS MESFET
FEATURES
• SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER • LOW CRSS: 0.02 pF (TYP) • HIGH GPS: 20 dB (TYP) AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm • ION IMPLANTATION • AVAILABLE IN TAPE & REEL OR BULK |
 NEC |
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| 10 | NE25139 | GENERAL PURPOSE DUAL GATE GAAS MESFET GENERAL PURPOSE DUAL-GATE GaAS MESFET
FEATURES
• SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER • LOW CRSS: 0.02 pF (TYP) • HIGH GPS: 20 dB (TYP) AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm • ION IMPLANTATION • AVAILABLE IN TAPE & REEL OR BULK |
NEC |
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| 9 | NE25139-T1 | GENERAL PURPOSE DUAL-GATE GaAS MESFET GENERAL PURPOSE DUAL-GATE GaAS MESFET
FEATURES
• SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER • LOW CRSS: 0.02 pF (TYP) • HIGH GPS: 20 dB (TYP) AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm • ION IMPLANTATION • AVAILABLE IN TAPE & REEL OR BULK |
NEC |
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| 8 | NE25139T1U71 | GENERAL PURPOSE DUAL-GATE GaAS MESFET GENERAL PURPOSE DUAL-GATE GaAS MESFET
FEATURES
• SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER • LOW CRSS: 0.02 pF (TYP) • HIGH GPS: 20 dB (TYP) AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm • ION IMPLANTATION • AVAILABLE IN TAPE & REEL OR BULK |
NEC |
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