NE25118-T1
NEC
GENERAL PURPOSE DUAL-GATE GaAS MESFETGENERAL PURPOSE DUAL-GATE GaAS MESFET
FEATURES
• SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER • LOW CRSS: 0.02 pF (TYP) • HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm • ION IM