Datasheet NE24200 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	NE24200	C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electr	NEC

NE24 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
NE24283B	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE24283B (SPACE QUALIFIED) FEATURES • VERY LOW NOISE FIGURE: 0.6 dB TYP at 12 GHz • HIGH ASSOCIATED GAIN: 11.0 dB TYP at 12 GHz • GATE LENGTH: 0.25 µm • GATE WIDTH: 200 µm • HERMETIC METAL/CERAMIC PACKAGE Optimum Noise Figure, NFOP	California Eastern
NE24200	C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create	NEC

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Número de pieza	Descripción	Fabricantes	PDF
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