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Datasheet NDT451 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | NDT451 | N-Channel Enhancement Mode Field Effect Transistor September 1996
NDT451N N-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to |
 Fairchild |
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| 3 | NDT451 | N-Channel Enhancement Mode Field Effect Transistor September 1996
NDT451N N-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to |
Fairchild |
|
| 2 | NDT451AN | N-Channel Enhancement Mode Field Effect Transistor July 1996
NDT451AN N-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to mini |
Fairchild |
|
| 1 | NDT451N | N-Channel Enhancement Mode Field Effect Transistor September 1996
NDT451N N-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to |
Fairchild |
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