Datasheet NDS336P Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	NDS336P	P-Channel Logic Level Enhancement Mode Field Effect Transistor June 1997 NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOTTM-3 P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is e	Fairchild

NDS3 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
NDS352AP	P-Channel Logic Level Enhancement Mode Field Effect Transistor February 1997 NDS352AP P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high d	Fairchild
NDS331N	N-Channel Logic Level Enhancement Mode Field Effect Transistor July 1996 NDS331N N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density	Fairchild
NDS355AN	N-Channel Logic Level Enhancement Mode Field Effect Transistor January 1997 NDS355AN N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very h	Fairchild

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