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Datasheet NDF653 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | NDF653 | Fast Recovery Diode NDF653
NDF653
Fast Recovery Diode
Replaces March 1998 version, DS4203 - 3.0 DS4203-4.0 January 2000
APPLICATIONS
s Induction Heating s A.C. Motor Drives s Inverters And Choppers s Welding s High Frequency Rectification s UPS
KEY PARAMETERS VRRM 1600V IF(AV) 660A IFSM 6500A Qr 45µC trr 1.4µs
FE |  Dynex | diode |
| 2 | NDF65310 | Fast Recovery Diode NDF653
NDF653
Fast Recovery Diode
Replaces March 1998 version, DS4203 - 3.0 DS4203-4.0 January 2000
APPLICATIONS
s Induction Heating s A.C. Motor Drives s Inverters And Choppers s Welding s High Frequency Rectification s UPS
KEY PARAMETERS VRRM 1600V IF(AV) 660A IFSM 6500A Qr 45µC trr 1.4µs
FE | Dynex | diode |
| 3 | NDF65312 | Fast Recovery Diode NDF653
NDF653
Fast Recovery Diode
Replaces March 1998 version, DS4203 - 3.0 DS4203-4.0 January 2000
APPLICATIONS
s Induction Heating s A.C. Motor Drives s Inverters And Choppers s Welding s High Frequency Rectification s UPS
KEY PARAMETERS VRRM 1600V IF(AV) 660A IFSM 6500A Qr 45µC trr 1.4µs
FE | Dynex | diode |
| 4 | NDF65314 | Fast Recovery Diode NDF653
NDF653
Fast Recovery Diode
Replaces March 1998 version, DS4203 - 3.0 DS4203-4.0 January 2000
APPLICATIONS
s Induction Heating s A.C. Motor Drives s Inverters And Choppers s Welding s High Frequency Rectification s UPS
KEY PARAMETERS VRRM 1600V IF(AV) 660A IFSM 6500A Qr 45µC trr 1.4µs
FE | Dynex | diode |
| 5 | NDF65316 | Fast Recovery Diode NDF653
NDF653
Fast Recovery Diode
Replaces March 1998 version, DS4203 - 3.0 DS4203-4.0 January 2000
APPLICATIONS
s Induction Heating s A.C. Motor Drives s Inverters And Choppers s Welding s High Frequency Rectification s UPS
KEY PARAMETERS VRRM 1600V IF(AV) 660A IFSM 6500A Qr 45µC trr 1.4µs
FE | Dynex | diode |
NDF Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | NDF02N60Z | N-Channel Power MOSFET, Transistor NDF02N60Z, NDD02N60Z
N-Channel Power MOSFET 600 V, 4.8 W
Features
• Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise n  ON Semiconductor mosfet | | |
| 2 | NDF03N60Z | N-Channel Power MOSFET, Transistor
NDF03N60Z, NDP03N60Z, NDD03N60Z N-Channel Power MOSFET 600 V, 3.3 W
Features
• • • •
Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant
http://onsemi.com
VDSS 600 V RDS(on) (TYP) @ 1.2 A 3.3 W
ABSOLUTE MAXIMUM R ON Semiconductor mosfet | | |
| 3 | NDF04N60Z | N-Channel Power MOSFET, Transistor NDF04N60Z, NDD04N60Z
N-Channel Power MOSFET 600 V, 2.0 W
Features
• Low ON Resistance • Low Gate Charge • ESD Diode−Protected Gate • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise n ON Semiconductor mosfet | | |
| 4 | NDF04N60ZH | N-Channel Power MOSFET, Transistor NDF04N60ZH
Product Preview N-Channel Power MOSFET 600 V, 2.0 W
Features
• Low ON Resistance • Low Gate Charge • 100% Avalanche Tested • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Parameter
Symbol ON Semiconductor mosfet | | |
| 5 | NDF04N62Z | N-Channel Power MOSFET, Transistor
NDF04N62Z, NDP04N62Z, NDD04N62Z N-Channel Power MOSFET 620 V, 1.8 W
Features
• • • •
Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and RoHS Compliant
http://onsemi.com
VDSS 620 V RDS(ON) (TYP) @ 2 A 1.8 Ω
ABSOLUTE MAXIMUM RATING ON Semiconductor mosfet | | |
| 6 | NDF05N50Z | N-Channel Power MOSFET, Transistor NDF05N50Z, NDP05N50Z, NDD05N50Z N-Channel Power MOSFET 500 V, 1.25 W
Features
• • • •
Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant
http://onsemi.com
VDSS 500 V RDS(on) (TYP) @ 2.2 A 1.25 W
ABSOLUTE MAXIMUM ON Semiconductor mosfet | | |
| 7 | NDF0610 | P-Channel Enhancement Mode Field Effect Transistor April 1995
NDF0610 / NDS0610 P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to min  Fairchild transistor | |
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