Datasheet NCE4435 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	NCE4435	NCE P-Channel Enhancement Mode Power MOSFET Pb Free Product NCE4435 NCE P-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES ● VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON)	NCE Power Semiconductor

NCE4 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
NCE40H12	N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com Pb Free Product NCE40H12 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature	NCE Power Semiconductor
NCE4435	NCE P-Channel Enhancement Mode Power MOSFET Pb Free Product NCE4435 NCE P-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES ● VDS = -30V,ID = -9.1A RDS(ON) < 35m�	NCE Power Semiconductor
NCE40H21	NCE N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com Pb Free Product NCE40H21 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE40H21 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Feature	NCE Power Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
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