Datasheet NCE2012 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	NCE2012	NCE N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com Pb Free Product NCE2012 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2012 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ●VDS =20V,ID =12A	NCE Power Semiconductor

NCE2 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
NCE2014ES	N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com Pb Free Product NCE2014ES NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2014ES uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Featu	NCE Power Semiconductor
NCE2010E	NCE N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com Pb Free Product NCE2010E NCE N-Channel Enhancement Mode Power MOSFET Description The NCE2010E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use a	NCE Power Semiconductor
NCE25G120T	Trench NPT IGBT http://www.ncepower.com NCE25G120T 1200V, 25A, Trench NPT IGBT Features z Trench NPT( Non Punch Through) IGBT z High speed switching z Low saturation voltage: VCE(sat)=2.0V@IC=25A z High input impedance Applications z Inductive heating, Microwave oven, Inverter, UPS, etc. z Soft	NCE Power Semiconductor

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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