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Data Sheet N0604N N-channel MOSFET 60 V, 82 A, 6.5 mΩ Description The N0604N is N-channel MOS Field Effect Transistor designed for high current switching applications. R07DS0850EJ0100 Rev.1.00 Aug 27, 2012 Features • Low on-state resistance RDS (on) = 6.5 mΩ MAX. (VGS = 10 V, ID = 41 A) • Lo
Preliminary Data Sheet N0601N N-CHANNEL MOSFET FOR SWITCHING Description R07DS0557EJ0100 Rev.1.00 Nov 07, 2011 The N0601N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.2 mΩ MAX. (VGS = 10 V, ID = 50 A
Preliminary Data Sheet N0602N N-CHANNEL MOSFET FOR SWITCHING Description R07DS0558EJ0100 Rev.1.00 Nov 07, 2011 The N0602N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A
Preliminary Data Sheet N0600N MOS FIELD EFFECT TRANSISTOR Description R07DS0220EJ0100 Rev.1.00 Jan 25, 2011 The N0600N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on)1 = 25 mΩ MAX. (VGS =10 V, ID = 15 A
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