Datasheet N0413N Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	N0413N	N-CHANNEL MOSFET FOR SWITCHING N0413N N-CHANNEL MOSFET FOR SWITCHING Preliminary Data Sheet R07DS0555EJ0100 Rev.1.00 Nov 07, 2011 Description The N0413N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 3.3 mΩ MAX. (VGS = 10 V, ID = 50 A)	Renesas

N04 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
N044RH02	(N044RHx) Phase Control Thyristors w w w .D at aS he et 4U .c om	Westcode Semiconductors
N04L1630C2B	4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K x 16 bit POWER SAVER TECHNOLOGY AMI Semiconductor, Inc. ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 N04L1630C2B Advance Information 4Mb Ultra-Low Power Asynchronous CMOS SRAMs 256K × 16 bit POWER SAVER TECHNOLOGY TM Overvi	AMI SEMICONDUCTOR
N04L163WC1C	4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N04L163WC1C Advance Information 4Mb Ultra-Low Power Asynchronous CMOS SRAM 256K × 16 bit Overview The N04L163WC1C is an integrated memory device	NanoAmp Solutions

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Número de pieza	Descripción	Fabricantes	PDF
SPS122	Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.	Sanken	PDF

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