|
2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MX043J MX043G 200 Volts 44 Amps 50 mΩ Features • • • • • • • • • • • Harris FSC260R die total dose: 100 kRAD(Si) within pre-radiation parameter limits dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS t
DATA BULLETIN MX019 FEATURES 4 Digitally Controlled Amplifiers 15 Gain/Attenuation Steps 3 Amplifiers ± 3dB Range in 0.43dB Steps 1 'Volume' Amplifier ±14dB Range in 2dB Steps 8-Bit Serial Data Control Output Mute Function SERIAL CLOCK INPUT SERIAL DATA INPUT 2 1 Quad Digital Control
DISCRETE SEMICONDUCTORS DATA SHEET MX0912B351Y NPN microwave power transistor Product specification Supersedes data of November 1994 1997 Feb 19 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Interdigitated structure; high emitter efficiency • Diffu
DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors FEATURES • Interdigitated structure provides high emitter e
2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MX043J MX043G 200 Volts 44 Amps 50 mΩ Features • • • • • • • • • • • Harris FSC260R die total dose: 100 kRAD(Si) within pre-radiation parameter limits dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS t
2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256 MX043J MX043G 200 Volts 44 Amps 50 mΩ Features • • • • • • • • • • • Harris FSC260R die total dose: 100 kRAD(Si) within pre-radiation parameter limits dose rate: 3 x 109 RAD(Si)/sec @ 80%BVDSS t
|
사이트 맵 |
0 1 2 3 4 5 6 7 8 9 A B C |
PartNumber.co.kr | 2020 | 연락처 |