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MW418 전자부품 데이터시트



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MW418  

Micronetics Wireless
Micronetics Wireless

MW418

Oscillators

MW418 VCOS FOR POINT/POINT APPLICATIONS SPECIFICATIONS Frequency Range: 1780 MHz @ 0.3 V 1900 MHz @ 2.5 V Tuning Sensitivity: ≥ 55 MHz/V Output Power: 0 ± 3 dBm Pushing: < 2 MHz/V Pulling: < 3 MHz (VSWR = 2.0:1, For All Phase, Ref. = 50 ) Phase Noise: @10




관련 부품 MW4 상세설명

MW4IC915NBR1  

  
RF LDMOS Wideband Integrated Power Amplifiers

Freescale Semiconductor Technical Data MW4IC915 Rev. 5, 3/2005 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses Freescale’s newest High Voltage (26 to 28 Volts) LD



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MW4IC915MBR1  

  
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MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MW4IC915/D RF LDMOS Wideband Integrated Power Amplifiers The MW4IC915MB/GMB wideband integrated circuit is designed for GSM and GSM EDGE base station applications. It uses



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MW4IC915GNBR1  

  
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MW4IC915GMBR1  

  
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MW4IC2230MBR1  

  
RF LDMOS Wideband Integrated Power Amplifiers

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Freescale Semiconductor, Inc. Order this document by MW4IC2230/D The Wideband IC Line RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230 wideband integrated circuit is designed for W - CDMA base station applications. It uses Mo



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MW4IC2230GNBR1  

  
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Freescale Semiconductor Technical Data Document Number: MW4IC2230N Rev. 6, 5/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW4IC2230N wideband integrated circuit is designed for W - CDMA base station applications. It uses Freescale’s newest High Voltage (26 to 28 Vo



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